NVBG190N65S3F

Note : Your request will be directed to onsemi.

The NVBG190N65S3F from onsemi is a MOSFET with Continous Drain Current 20 A, Drain Source Resistance 158 to 190 milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Surface Mount. More details for NVBG190N65S3F can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    NVBG190N65S3F
  • Manufacturer
    onsemi
  • Description
    -30 to 30 V, 650 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    20 A
  • Drain Source Resistance
    158 to 190 milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    36 nC
  • Power Dissipation
    162 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D2PAK-7L
  • Applications
    Automotive On Board Charger, Automotive DC/DC Converter for BEV

Technical Documents