NVCR4LS2D5N10MCA

Note : Your request will be directed to onsemi.

The NVCR4LS2D5N10MCA from onsemi is a MOSFET with Continous Drain Current 252 A, Drain Source Resistance 2 to 5.6 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Wafer. More details for NVCR4LS2D5N10MCA can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    NVCR4LS2D5N10MCA
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    252 A
  • Drain Source Resistance
    2 to 5.6 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    73 nC
  • Power Dissipation
    357 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Wafer
  • Applications
    Switching Power Supplies, Power switches (High side driver, Low side driver, H-Bridges, etc), 48 V Systems

Technical Documents