NVD5C648NLT4G

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The NVD5C648NLT4G from onsemi is a MOSFET with Continous Drain Current 89 A, Drain Source Resistance 3.4 to 5.7 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.1 V. Tags: Surface Mount. More details for NVD5C648NLT4G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVD5C648NLT4G
  • Manufacturer
    onsemi
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    89 A
  • Drain Source Resistance
    3.4 to 5.7 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.1 V
  • Gate Charge
    17 to 39 nC
  • Power Dissipation
    72 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK
  • Applications
    Low Side Driver, High Side Driver, Motor drive

Technical Documents