NVH4L022N120M3S

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The NVH4L022N120M3S from onsemi is a MOSFET with Continous Drain Current 68 A, Drain Source Resistance 22 to 34 milliohm, Drain Source Breakdown Voltage 1200 V, Gate Source Voltage -10 to 22 V, Gate Source Threshold Voltage 2.04 to 4.4 V. Tags: Through Hole. More details for NVH4L022N120M3S can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVH4L022N120M3S
  • Manufacturer
    onsemi
  • Description
    2.04 to 4.4 V N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    68 A
  • Drain Source Resistance
    22 to 34 milliohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -10 to 22 V
  • Gate Source Threshold Voltage
    2.04 to 4.4 V
  • Gate Charge
    151 nC
  • Power Dissipation
    352 W
  • Temperature operating range
    -55 to 175 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247-4
  • Applications
    Automotive On Board Charger, Automotive DC/DC Converter for EV/HEV, Automotive Traction Inverter

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