NVLUD4C26NTAG

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The NVLUD4C26NTAG from onsemi is a MOSFET with Continous Drain Current 9.1 A, Drain Source Resistance 17.5 to 65 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.6 to 1.1 V. Tags: Surface Mount. More details for NVLUD4C26NTAG can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVLUD4C26NTAG
  • Manufacturer
    onsemi
  • Description
    30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    9.1 A
  • Drain Source Resistance
    17.5 to 65 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.6 to 1.1 V
  • Gate Charge
    5 to 8 nC
  • Power Dissipation
    2.63 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    UDFN-6
  • Applications
    Power Load Switch, Wireless Charging, DC-DC Converters

Technical Documents