NVMFD6H852NLWFT1G

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The NVMFD6H852NLWFT1G from onsemi is a MOSFET with Continous Drain Current 25 A, Drain Source Resistance 21 to 31.5 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2 V. Tags: Surface Mount. More details for NVMFD6H852NLWFT1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVMFD6H852NLWFT1G
  • Manufacturer
    onsemi
  • Description
    80 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    25 A
  • Drain Source Resistance
    21 to 31.5 milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2 V
  • Gate Charge
    5 to 10 nC
  • Power Dissipation
    38 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN8
  • Applications
    Reverse Battery protection, Power switches (High Side Driver, H-Bridges etc.), Switching power supplies

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