NVMFS4C302NT1G

Note : Your request will be directed to onsemi.

The NVMFS4C302NT1G from onsemi is a MOSFET with Continous Drain Current 241 A, Drain Source Resistance 0.95 to 1.7 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.3 to 2.2 V. Tags: Surface Mount. More details for NVMFS4C302NT1G can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    NVMFS4C302NT1G
  • Manufacturer
    onsemi
  • Description
    30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    241 A
  • Drain Source Resistance
    0.95 to 1.7 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.3 to 2.2 V
  • Gate Charge
    37 to 82 nC
  • Power Dissipation
    115 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO-8 FLAT LEAD
  • Applications
    DC-DC converter output driver

Technical Documents