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The NVMFS5C404NLWFET3G from onsemi is an Automotive Qualified N-Channel Enhancement Mode Power MOSFET that has been designed to offer a small footprint and compact design to cater to space-constrained applications. It has a drain-source breakdown voltage of over 40 V, a gate threshold voltage of up to 2 V, and a drain-source on-resistance of less than 0.67 milli-ohms. This MOSFET has a continuous drain current of up to 370 A and a power dissipation of less than 200 W. It has a low gate charge and capacitance to minimize driver losses and conduction losses. This AEC-Q101-qualified MOSFET provides a wettable flank option for enhanced optical inspection and is available in a surface-mount package that measures 5.7 x 4.7 x 0.9 mm.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    AEC-Q100 Qualified N-Channel Enhancement Mode MOSFET


  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
  • Dimensions
    5.7 x 4.7 x 0.9 mm
  • Number of Channels
  • Continous Drain Current
    370 A
  • Drain Source Resistance
    0.67 milli-ohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 V
  • Gate Charge
    81 to 181 nC
  • Power Dissipation
    200 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
  • RoHS Compliant
  • Package Type
    Surface Mount
  • Package
  • Applications
    Reverse Battery protection, Switching power supplies, Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)

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