The NVMFS5C404NLWFET3G from onsemi is an Automotive Qualified N-Channel Enhancement Mode Power MOSFET that has been designed to offer a small footprint and compact design to cater to space-constrained applications. It has a drain-source breakdown voltage of over 40 V, a gate threshold voltage of up to 2 V, and a drain-source on-resistance of less than 0.67 milli-ohms. This MOSFET has a continuous drain current of up to 370 A and a power dissipation of less than 200 W. It has a low gate charge and capacitance to minimize driver losses and conduction losses. This AEC-Q101-qualified MOSFET provides a wettable flank option for enhanced optical inspection and is available in a surface-mount package that measures 5.7 x 4.7 x 0.9 mm.