NVTFWS9D6P04M8LTAG

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The NVTFWS9D6P04M8LTAG from onsemi is a MOSFET with Continous Drain Current -64 A, Drain Source Resistance 7.5 to 13.8 mohms, Drain Source Breakdown Voltage -40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.4 to -1 V. Tags: Surface Mount. More details for NVTFWS9D6P04M8LTAG can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVTFWS9D6P04M8LTAG
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 16.2 to 34.6 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Dimensions
    3.3 x 3.3 mm
  • Number of Channels
    Single
  • Continous Drain Current
    -64 A
  • Drain Source Resistance
    7.5 to 13.8 mohms
  • Drain Source Breakdown Voltage
    -40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.4 to -1 V
  • Gate Charge
    16.2 to 34.6 nC
  • Power Dissipation
    75 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    WDFNW8
  • Applications
    Reverse Battery protection, Power switches (High Side Driver, Low Side Driver, H-Bridges etc.), Switching power supplies

Technical Documents