The NVVR26A120M1WSS from onsemi is an Automotive Qualified SiC MOSFET Module that is ideal for automotive EV/HEV traction inverter applications. It has a drain-source voltage of up to 1200 V, a gate threshold voltage of 3.2 V, and a drain-source on-resistance of 2.6 milli-ohms. This AQG324-qualified MOSFET module has a continuous drain current of up to 400 A and power dissipation of less than 1000 W. It is an integrated solution that consists of two SiC MOSFETs connected in a half-bridge configuration. This AQG34-qualified MOSFET module is manufactured using sintered die technology that ensures high performance and reliability. It is based on the revolutionary high-mobility compound semiconductor product family that offers increased performance, high efficiency, and higher power density in similar and highly compatible packaging solutions. This SiC MOSFET module integrates an aluminum nitride isolator and provides PPAP capability. It is available in a module that measures 54.80 x 54.80 mm.