Note : Your request will be directed to onsemi.

NVVR26A120M1WSS Image

The NVVR26A120M1WSS from onsemi is an Automotive Qualified SiC MOSFET Module that is ideal for automotive EV/HEV traction inverter applications. It has a drain-source voltage of up to 1200 V, a gate threshold voltage of 3.2 V, and a drain-source on-resistance of 2.6 milli-ohms. This AQG324-qualified MOSFET module has a continuous drain current of up to 400 A and power dissipation of less than 1000 W. It is an integrated solution that consists of two SiC MOSFETs connected in a half-bridge configuration. This AQG34-qualified MOSFET module is manufactured using sintered die technology that ensures high performance and reliability. It is based on the revolutionary high-mobility compound semiconductor product family that offers increased performance, high efficiency, and higher power density in similar and highly compatible packaging solutions. This SiC MOSFET module integrates an aluminum nitride isolator and provides PPAP capability. It is available in a module that measures 54.80 x 54.80 mm.

Product Specifications

View similar products

Product Details

  • Part Number
  • Manufacturer
  • Description
    1200 V Automotive Qualified SiC MOSFET


  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
  • Transistor Polarity
  • Continous Drain Current
    400 A
  • Drain Source Resistance
    2.6 milli-ohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -10 to 25 V
  • Gate Source Threshold Voltage
    3.2 V
  • Gate Charge
    1.75 µC
  • Power Dissipation
    1000 W
  • Temperature operating range
    -40 to 175 Degree C
  • Industry
  • Qualification
  • Package Type
  • Applications
    Automotive EV/HEV- Traction Inverter

Technical Documents