The NVXK2TR40WXT from onsemi is an Automotive-Qualified H-Bridge SiC Power MOSFET that is ideal for an onboard charger (OBC) for xEV applications. It has a drain-source breakdown voltage of over 1200 V, a gate threshold voltage of 3 V, and a drain-source on-resistance of less than 59 mΩ. This AEC-Q101-qualified MOSFET has a continuous drain current of up to 27 A and power dissipation of less than 319 W. It has a compact design that results in low total module resistance and is serialized to allow full traceability.
This AQG324-qualified power MOSFET enables the design of a small, efficient, and reliable system for reduced vehicle fuel consumption and CO2 emission. It guarantees simplified assembly, optimized layout, a high level of integration, and improves thermal performance, which enhances the overall system performance. The RoHS-compliant SiC MOSFET is available in a through-hole package.