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The NVXK2TR40WXT from onsemi is an Automotive-Qualified H-Bridge SiC Power MOSFET that is ideal for an onboard charger (OBC) for xEV applications. It has a drain-source breakdown voltage of over 1200 V, a gate threshold voltage of 3 V, and a drain-source on-resistance of less than 59 mΩ. This AEC-Q101-qualified MOSFET has a continuous drain current of up to 27 A and power dissipation of less than 319 W. It has a compact design that results in low total module resistance and is serialized to allow full traceability.

This AQG324-qualified power MOSFET enables the design of a small, efficient, and reliable system for reduced vehicle fuel consumption and CO2 emission. It guarantees simplified assembly, optimized layout, a high level of integration, and improves thermal performance, which enhances the overall system performance. The RoHS-compliant SiC MOSFET is available in a through-hole package.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    Automotive-Qualified SiC Power MOSFET for On-Board Charging Applications


  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
  • Transistor Polarity
  • Number of Channels
  • Continous Drain Current
    27 A
  • Drain Source Resistance
    59 milliohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -15 to 25 V
  • Gate Source Threshold Voltage
    3 V
  • Gate Charge
    106 nC
  • Power Dissipation
    319 W
  • Temperature operating range
    -55 to 175 degree C
  • Industry
  • Qualification
    AEC-Q101, AQG324
  • RoHS Compliant
  • Package Type
    Through Hole
  • Package
  • Applications
    DC-DC and On-Board Charger in xEV Applications

Technical Documents