NVXK2TR40WXT

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NVXK2TR40WXT Image

The NVXK2TR40WXT from onsemi is an Automotive-Qualified H-Bridge SiC Power MOSFET that is ideal for an onboard charger (OBC) for xEV applications. It has a drain-source breakdown voltage of over 1200 V, a gate threshold voltage of 3 V, and a drain-sour

Product Specifications

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Product Details

  • Part Number
    NVXK2TR40WXT
  • Manufacturer
    onsemi
  • Description
    Automotive-Qualified SiC Power MOSFET for On-Board Charging Applications

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Quad
  • Continous Drain Current
    27 A
  • Drain Source Resistance
    59 milliohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -15 to 25 V
  • Gate Source Threshold Voltage
    3 V
  • Gate Charge
    106 nC
  • Power Dissipation
    319 W
  • Temperature operating range
    -55 to 175 degree C
  • Industry
    Automotive
  • Qualification
    AEC-Q101, AQG324
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    APM32
  • Applications
    DC-DC and On-Board Charger in xEV Applications

Technical Documents