PCFA86062WA

Note : Your request will be directed to onsemi.

The PCFA86062WA from onsemi is a MOSFET with Continous Drain Current 315.7 A, Drain Source Resistance 1.5 to 4.3 mohms, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Wafer. More details for PCFA86062WA can be seen below.

Product Specifications

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Product Details

  • Part Number
    PCFA86062WA
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 95 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    315.7 A
  • Drain Source Resistance
    1.5 to 4.3 mohms
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    95 nC
  • Power Dissipation
    429 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Wafer
  • Applications
    Reverse Battery protection, Power switches (High Side Driver, Low Side Driver, H-Bridges etc.), Switching power supplies

Technical Documents