PJD18N20

Note : Your request will be directed to PANJIT Semiconductor.

The PJD18N20 from PANJIT Semiconductor is a MOSFET with Continous Drain Current 18 A, Drain Source Resistance 126 to 160 milliohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for PJD18N20 can be seen below.

Product Specifications

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Product Details

  • Part Number
    PJD18N20
  • Manufacturer
    PANJIT Semiconductor
  • Description
    200 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    18 A
  • Drain Source Resistance
    126 to 160 milliohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    24 nC
  • Power Dissipation
    88 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Military
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252AA

Technical Documents

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