PJD4NA50A

Note : Your request will be directed to PANJIT Semiconductor.

The PJD4NA50A from PANJIT Semiconductor is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 2000 to 2300 milliohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for PJD4NA50A can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    PJD4NA50A
  • Manufacturer
    PANJIT Semiconductor
  • Description
    500 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    2000 to 2300 milliohm
  • Drain Source Breakdown Voltage
    500 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    9.8 nC
  • Power Dissipation
    78 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Military
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252AA

Technical Documents

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.