Note : Your request will be directed to PANJIT Semiconductor.

PJQ1938 Image

The PJQ1938 from PANJIT Semiconductors is an N-Channel Enhancement Mode MOSFET that is specifically designed for switch load applications. It has a drain-source breakdown voltage of over 50 V, a gate threshold voltage of up to 1.5 V, and a drain-source on-resistance of less than 4 Ω. This MOSFET has a continuous drain current of up to 600 mA and power dissipation of less than 900 mW. It offers ESD protection of 2 kV HBM and complies with the MIL-STD-750 standard. This RoHS-compliant MOSFET is available in a surface-mount package that measures 0.65 x 1.05 mm.

Product Specifications

View similar products

Product Details

  • Part Number
  • Manufacturer
    PANJIT Semiconductor
  • Description
    50 V N-Channel Enhancement Mode MOSFET


  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
  • Dimensions
    0.65 x 1.05 mm
  • Number of Channels
  • Continous Drain Current
    0.6 A
  • Drain Source Resistance
    4000 milliohm
  • Drain Source Breakdown Voltage
    50 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
  • Gate Charge
    1.7 nC
  • Power Dissipation
    0.9 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Military
  • RoHS Compliant
  • Package Type
    Surface Mount
  • Package
  • Applications
    Switch Load applications

Technical Documents