The PJQ1938 from PANJIT Semiconductors is an N-Channel Enhancement Mode MOSFET that is specifically designed for switch load applications. It has a drain-source breakdown voltage of over 50 V, a gate threshold voltage of up to 1.5 V, and a drain-source on-resistance of less than 4 Ω. This MOSFET has a continuous drain current of up to 600 mA and power dissipation of less than 900 mW. It offers ESD protection of 2 kV HBM and complies with the MIL-STD-750 standard. This RoHS-compliant MOSFET is available in a surface-mount package that measures 0.65 x 1.05 mm.