PJQ2800

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The PJQ2800 from PANJIT Semiconductor is a MOSFET with Continous Drain Current 5.2 A, Drain Source Resistance 24 to 65 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.4 to 0.9 V. Tags: Surface Mount. More details for PJQ2800 can be seen below.

Product Specifications

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Product Details

  • Part Number
    PJQ2800
  • Manufacturer
    PANJIT Semiconductor
  • Description
    20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    5.2 A
  • Drain Source Resistance
    24 to 65 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.4 to 0.9 V
  • Gate Charge
    6.3 nC
  • Power Dissipation
    1.45 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Military
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN2020-6L

Technical Documents

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