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PJQ4439EP-AU_R2_002A1 Image

The PJQ4439EP-AU_R2_002A1 from PANJIT Semiconductor is an Automotive Qualified P-Channel Enhancement Mode MOSFET. It has a drain-source breakdown voltage of over -30 V, a gate threshold voltage of -1.8 V, and a drain-source on-resistance of less than 31.2 milli-ohms. This AEC-Q101-qualified MOSFET has a continuous drain current of up to -9 A and a power dissipation of less than 2.5 W. It features a green molding compound as per IEC 61249 standard and offers reliable and rugged performance. This RoHS-compliant MOSFET is available in a surface-mount package that measures 3.3 x 3.2 x 0.80 mm.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    PANJIT Semiconductor
  • Description
    Automotive Qualified P-Channel Enhancement Mode MOSFET


  • Types of MOSFET
    P- Channel Enhancement Mode
  • Transistor Polarity
  • Dimensions
    3.3 x 3.2 x 0.80 mm
  • Number of Channels
  • Continous Drain Current
    -9 A
  • Drain Source Resistance
    31.2 milli-ohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    25 V
  • Gate Source Threshold Voltage
    -1.8 V
  • Gate Charge
    22 nC
  • Power Dissipation
    2.5 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
  • Qualification
  • RoHS Compliant
  • Package Type
    Surface Mount
  • Package
  • Applications

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