PSMQC120N06LS1

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The PSMQC120N06LS1 from PANJIT Semiconductor is a MOSFET with Continous Drain Current 39 A, Drain Source Resistance 9 to 16 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.5 V. Tags: Surface Mount. More details for PSMQC120N06LS1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSMQC120N06LS1
  • Manufacturer
    PANJIT Semiconductor
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    39 A
  • Drain Source Resistance
    9 to 16 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.5 V
  • Gate Charge
    16 nC
  • Power Dissipation
    13 to 33 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Military
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN5060-8L
  • Applications
    SR solutions of PD Charger, BMS, BLDC motor driver switch

Technical Documents

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