UF4C120053K4S

MOSFET by Qorvo (3 more products)

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The UF4C120053K4C from Qorvo is an N-Channel Enhancement Mode SiC MOSFET. It is based on a unique ‘cascade’ circuit configuration in which a normally-on SiC JFET is co-packaged with Si MOSFET to produce a normally-off SiC FET device. This SiC MOSFET has a gate-source voltage of up to 20 V and a gate threshold voltage of 4.8 V. It has a drain-source breakdown voltage of over 1200 V and a drain-source on-resistance of 53 mΩ. This RoHS compliant MOSFET has a continuous drain current of up to 34 A and power dissipation of less than 263 W. It offers an efficient gate drive operation due to its ultra-low gate charge and exceptional reverse recovery characteristics. This MOSFET is available as a through-hole package and is ideal for PV inverters, induction heating, motor drives, EV charging, switch-mode power supplies, and power factor correction applications.

Product Specifications

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Product Details

  • Part Number
    UF4C120053K4S
  • Manufacturer
    Qorvo
  • Description
    N-Channel SiC MOSFET for EV Charging Applications

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    34 A
  • Drain Source Resistance
    53 milliohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    4.8 V
  • Gate Charge
    37.8 nC
  • Power Dissipation
    263 W
  • Temperature operating range
    -55 to 175 degree C
  • Industry
    Automotive, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247-4L
  • Applications
    EV charging, Induction Heating, Motor Drive, Power factor correction modules, PV inverter, Switch Mode Power Supplies

Technical Documents