UJ4C075018K3S

MOSFET by Qorvo (23 more products)

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The UJ4C075018K3S from Qorvo is an N-Channel Enhancement Mode SiC MOSFET that is ideal for EV charging, PV inverters, switch mode power supplies, and power factor correction modules, motor drives, and induction heating applications. This MOSFET is based on a unique ‘cascode’ configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. It has a drain-source voltage of less than 750 V, a gate threshold voltage of 4.8 V, and a drain-source on-resistance of less than 23 mΩ. This power MOSFET has a continuous drain current of up to 81 A and power dissipation of less than 385 W. It has an optimized design with an ultra-low gate charge and exceptional reverser recovery characteristics, thereby it ideal for switching inductive loads and any applications requiring standard gate drive operation. This RoHS-compliant MOSFET is available in a through-hole package.

Product Specifications

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Product Details

  • Part Number
    UJ4C075018K3S
  • Manufacturer
    Qorvo
  • Description
    750 V N-Channel Enhancement Mode SiC MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    81 A
  • Drain Source Resistance
    23 milliohm
  • Drain Source Breakdown Voltage
    750 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    4.8 V
  • Gate Charge
    37.8 nC
  • Power Dissipation
    385 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247-3L
  • Applications
    EV charging, PV inverters, Switch mode power supplies, Power factor correction modules, Motor drives, Induction heating

Technical Documents