RM140N150BT7

Note : Your request will be directed to Rectron Semiconductor.

RM140N150BT7 Image

The RM140N150BT7 from Rectron Semiconductor is a MOSFET with Continous Drain Current 140 A, Drain Source Resistance 6.2 to 7.2 milliohm, Drain Source Breakdown Voltage 150 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for RM140N150BT7 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    RM140N150BT7
  • Manufacturer
    Rectron Semiconductor
  • Description
    150 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    140 A
  • Drain Source Resistance
    6.2 to 7.2 milliohm
  • Drain Source Breakdown Voltage
    150 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    64 nC
  • Power Dissipation
    300 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-247
  • Applications
    Synchronous Rectification in SMPS, Hard Switching and High Speed Circuit, Power Tools, UPS, Motor Control, Halogen-free

Technical Documents