RM18N200T2

Note : Your request will be directed to Rectron Semiconductor.

RM18N200T2 Image

The RM18N200T2 from Rectron Semiconductor is a MOSFET with Continous Drain Current 18.2 A, Drain Source Resistance 95 to 140 milliohm, Drain Source Breakdown Voltage 200V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Through Hole. More details for RM18N200T2 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    RM18N200T2
  • Manufacturer
    Rectron Semiconductor
  • Description
    200V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    18.2 A
  • Drain Source Resistance
    95 to 140 milliohm
  • Drain Source Breakdown Voltage
    200V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    9.8 nC
  • Power Dissipation
    88 W
  • Temperature operating range
    -55 to 170 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Power factor correction(PFC), Switched mode power supplies(SMPS), Uninterruptible Power Supply(UPS)

Technical Documents