RM200N40DF

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The RM200N40DF from Rectron Semiconductor is a MOSFET with Continous Drain Current 200 A, Drain Source Resistance 0.9 to 1.5 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.2 V. Tags: Surface Mount. More details for RM200N40DF can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM200N40DF
  • Manufacturer
    Rectron Semiconductor
  • Description
    40 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    200 A
  • Drain Source Resistance
    0.9 to 1.5 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.2 V
  • Gate Charge
    81.4 nC
  • Power Dissipation
    67.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    PDFN5X6-8L
  • Applications
    PWM applications, Load Switch, Power management, Halogen free

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