RM2312

Note : Your request will be directed to Rectron Semiconductor.

RM2312 Image

The RM2312 from Rectron Semiconductor is a MOSFET with Continous Drain Current 4.5 A, Drain Source Resistance 18 to 45 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.5 to 1.2 V. Tags: Surface Mount. More details for RM2312 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    RM2312
  • Manufacturer
    Rectron Semiconductor
  • Description
    20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4.5 A
  • Drain Source Resistance
    18 to 45 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.5 to 1.2 V
  • Gate Charge
    10 to 15 nC
  • Power Dissipation
    1.25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Qualification
    AEC-Q101
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Battery switch, DC/DC converter, Halogen free

Technical Documents