RM25N100DF

Note : Your request will be directed to Rectron Semiconductor.

The RM25N100DF from Rectron Semiconductor is a MOSFET with Continous Drain Current 25 A, Drain Source Resistance 20 to 38 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.8 V. Tags: Surface Mount. More details for RM25N100DF can be seen below.

Product Specifications

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Product Details

  • Part Number
    RM25N100DF
  • Manufacturer
    Rectron Semiconductor
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    25 A
  • Drain Source Resistance
    20 to 38 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.8 V
  • Gate Charge
    22.7 nC
  • Power Dissipation
    45 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    DFN5X6-8L
  • Applications
    PWM, Load Switching, Halogen-free

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