RM75P60HD

Note : Your request will be directed to Rectron Semiconductor.

RM75P60HD Image

The RM75P60HD from Rectron Semiconductor is a MOSFET with Continous Drain Current -75 A, Drain Source Resistance 7.6 to 12 milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.5 to -1.2 V. Tags: Surface Mount. More details for RM75P60HD can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    RM75P60HD
  • Manufacturer
    Rectron Semiconductor
  • Description
    -60 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -75 A
  • Drain Source Resistance
    7.6 to 12 milliohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.5 to -1.2 V
  • Gate Charge
    138 to 210 nC
  • Power Dissipation
    183 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Qualification
    AEC-Q101
  • Package Type
    Surface Mount
  • Package
    TO-263
  • Applications
    Power switching application, Hard switched and High frequency circuits, Uninterruptible power supply

Technical Documents