RMA35N50ES5

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The RMA35N50ES5 from Rectron Semiconductor is a MOSFET with Continous Drain Current 0.35 A, Drain Source Resistance 1150 to 2250 milliohm, Drain Source Breakdown Voltage 50 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.5 to 1.5 V. Tags: Surface Mount. More details for RMA35N50ES5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RMA35N50ES5
  • Manufacturer
    Rectron Semiconductor
  • Description
    50 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.35 A
  • Drain Source Resistance
    1150 to 2250 milliohm
  • Drain Source Breakdown Voltage
    50 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.5 to 1.5 V
  • Gate Charge
    0.6 nC
  • Power Dissipation
    0.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    SOT-523
  • Applications
    Power Management, Load Switching, Halogen free

Technical Documents