RMA35N60ED1

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RMA35N60ED1 Image

The RMA35N60ED1 from Rectron Semiconductor is a MOSFET with Continous Drain Current 0.35 A, Drain Source Resistance 2200 to 3200 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 1.9 V. Tags: Surface Mount. More details for RMA35N60ED1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RMA35N60ED1
  • Manufacturer
    Rectron Semiconductor
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.35 A
  • Drain Source Resistance
    2200 to 3200 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 1.9 V
  • Gate Charge
    5 nC
  • Power Dissipation
    0.35 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    DFN1006
  • Applications
    Direct logic-level interface: TTL/CMOS Drivers: relays, solenoids, lamps, hammers, display, memories, transistors, Switching circuits, Solid state relay

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