RMA4N60092

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RMA4N60092 Image

The RMA4N60092 from Rectron Semiconductor is a MOSFET with Continous Drain Current 0.4 A, Drain Source Resistance 7000 to 8500 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Through Hole. More details for RMA4N60092 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RMA4N60092
  • Manufacturer
    Rectron Semiconductor
  • Description
    600 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.4 A
  • Drain Source Resistance
    7000 to 8500 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    3.5 nC
  • Power Dissipation
    2.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-92
  • Applications
    Power Supply, Battery Charge, Ballast

Technical Documents