RMA7P20ED1

Note : Your request will be directed to Rectron Semiconductor.

RMA7P20ED1 Image

The RMA7P20ED1 from Rectron Semiconductor is a MOSFET with Continous Drain Current -0.7 A, Drain Source Resistance 360 to 500 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1 to -0.45 V. Tags: Surface Mount. More details for RMA7P20ED1 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    RMA7P20ED1
  • Manufacturer
    Rectron Semiconductor
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -0.7 A
  • Drain Source Resistance
    360 to 500 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1 to -0.45 V
  • Gate Charge
    0.8 nC
  • Power Dissipation
    0.9 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    DFN1006-3
  • Applications
    Load Switch

Technical Documents