RMA9N20S5

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The RMA9N20S5 from Rectron Semiconductor is a MOSFET with Continous Drain Current 0.87 A, Drain Source Resistance 190 to 455 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.5 to 1 V. Tags: Surface Mount. More details for RMA9N20S5 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RMA9N20S5
  • Manufacturer
    Rectron Semiconductor
  • Description
    20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.87 A
  • Drain Source Resistance
    190 to 455 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.5 to 1 V
  • Gate Charge
    2 nC
  • Power Dissipation
    0.28 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    SOT-523
  • Applications
    SMPS and general purpose applications, Hard switched and high frequency circuits, Uninterruptible power supply, halegen free

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