RMD5N60S8

Note : Your request will be directed to Rectron Semiconductor.

RMD5N60S8 Image

The RMD5N60S8 from Rectron Semiconductor is a MOSFET with Continous Drain Current 5 A, Drain Source Resistance 30 to 42 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for RMD5N60S8 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    RMD5N60S8
  • Manufacturer
    Rectron Semiconductor
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    5 A
  • Drain Source Resistance
    30 to 42 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    22 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    SOP-8
  • Applications
    DC/DC Converter, Load switch for portable device, Battery switch, Halogen free

Technical Documents