RMP3N90IP

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RMP3N90IP Image

The RMP3N90IP from Rectron Semiconductor is a MOSFET with Continous Drain Current 3 A, Drain Source Resistance 2800 to 3200 milliohm, Drain Source Breakdown Voltage 900 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Through Hole. More details for RMP3N90IP can be seen below.

Product Specifications

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Product Details

  • Part Number
    RMP3N90IP
  • Manufacturer
    Rectron Semiconductor
  • Description
    900 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3 A
  • Drain Source Resistance
    2800 to 3200 milliohm
  • Drain Source Breakdown Voltage
    900 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    19 nC
  • Power Dissipation
    50 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-251
  • Applications
    High efficiency switch mode power supplies, Electronic lamp ballasts, Uninterruptible Power Supply(UPS)

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