RMP4N60TI

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RMP4N60TI Image

The RMP4N60TI from Rectron Semiconductor is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 2000 to 2500 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for RMP4N60TI can be seen below.

Product Specifications

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Product Details

  • Part Number
    RMP4N60TI
  • Manufacturer
    Rectron Semiconductor
  • Description
    600 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    2000 to 2500 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    15 to 20 nC
  • Power Dissipation
    33 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-220F
  • Applications
    High efficiency switch mode power supplies Applications, Electronic lamp ballasts, UPS

Technical Documents