RMP4N65T2

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RMP4N65T2 Image

The RMP4N65T2 from Rectron Semiconductor is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 2100 to 2500 milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for RMP4N65T2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RMP4N65T2
  • Manufacturer
    Rectron Semiconductor
  • Description
    650 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    2100 to 2500 milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    15 to 20 nC
  • Power Dissipation
    100 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Qualification
    AEC-Q101
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    High efficiency switch mode power supplies Applications, Electronic lamp ballasts, UPS

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