RMP7N80TI

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RMP7N80TI Image

The RMP7N80TI from Rectron Semiconductor is a MOSFET with Continous Drain Current 7 A, Drain Source Resistance 1600 to 2000 milliohm, Drain Source Breakdown Voltage 800 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for RMP7N80TI can be seen below.

Product Specifications

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Product Details

  • Part Number
    RMP7N80TI
  • Manufacturer
    Rectron Semiconductor
  • Description
    800 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    7 A
  • Drain Source Resistance
    1600 to 2000 milliohm
  • Drain Source Breakdown Voltage
    800 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    27 to 35 nC
  • Power Dissipation
    49 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-220F
  • Applications
    High efficiency switch mode power supplies Applications, Electronic lamp ballasts, UPS

Technical Documents