RSM60N120TL

Note : Your request will be directed to Rectron Semiconductor.

The RSM60N120TL from Rectron Semiconductor is a MOSFET with Continous Drain Current 60 A, Drain Source Resistance 40 to 80 milliohm, Drain Source Breakdown Voltage 1200 V, Gate Source Voltage -10 to 25 V, Gate Source Threshold Voltage 1.8 to 4 V. Tags: Through Hole. More details for RSM60N120TL can be seen below.

Product Specifications

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Product Details

  • Part Number
    RSM60N120TL
  • Manufacturer
    Rectron Semiconductor
  • Description
    1200 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    60 A
  • Drain Source Resistance
    40 to 80 milliohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Source Voltage
    -10 to 25 V
  • Gate Source Threshold Voltage
    1.8 to 4 V
  • Gate Charge
    37 nC
  • Power Dissipation
    330 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-247-4
  • Applications
    High Voltage DC/DC Converters, Motor Drives, Switch Mode Power Supplies, Pulsed Power applications

Technical Documents