Note : Your request will be directed to Renesas.
The 2SJ484 from Renesas is a MOSFET with Continous Drain Current -2 A, Drain Source Resistance 0.18 to 0.45 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage 20 V. Tags: Through Hole. More details for 2SJ484 can be seen below.
60 V N-Channel MOSFET
1200 V 23 milliohm SiC FET
1200 V N Channel Enhancement Mode SiC MOSFET
N Channel Enhancement Mode MOSFET for Switching Applications
You can now find similar products from multiple companies on everything PE.
Let us know what you need, we can help find products that meet your requirement.
Our team will get back to you shortly.
Copyright 2020 © everything PE All Rights Reseverd  |
Our Newsletter will keep you up to date with the Power Electronics Industry.
Create an account on everything PE to get a range of benefits.
Login to everything PE to download datasheets, white papers and more content.
Login to everything RF to download datasheets, white papers and more content.
Content submitted here will be sent to our editorial team who will review and consider it for publication on the website. you will be emailed if this content is published on everything PE.
Please click on the button in the email to get access to this section.