2SK1835

Note : Your request will be directed to Renesas.

The 2SK1835 from Renesas is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 4600 to 7000 milliohm, Drain Source Breakdown Voltage 1500 V, Gate Source Voltage -20 to 20 V, Power Dissipation 125 W. Tags: Through Hole. More details for 2SK1835 can be seen below.

Product Specifications

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Product Details

  • Part Number
    2SK1835
  • Manufacturer
    Renesas
  • Description
    1500 V, 4 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    4600 to 7000 milliohm
  • Drain Source Breakdown Voltage
    1500 V
  • Gate Source Voltage
    -20 to 20 V
  • Power Dissipation
    125 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-3P
  • Applications
    High speed power switching

Technical Documents

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