RBK04U04GNS

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The RBK04U04GNS from Renesas is a MOSFET with Continous Drain Current 35 A, Drain Source Resistance 1.2 to 1.5 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Charge 111 nC. Tags: Surface Mount. More details for RBK04U04GNS can be seen below.

Product Specifications

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Product Details

  • Part Number
    RBK04U04GNS
  • Manufacturer
    Renesas
  • Description
    40 V, 35 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    35 A
  • Drain Source Resistance
    1.2 to 1.5 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Charge
    111 nC
  • Power Dissipation
    83 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    HSON
  • Applications
    Li-ion battery management system

Technical Documents

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