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RJF0611DPD

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RJF0611DPD Image

The RJF0611DPD from Renesas is a MOSFET with Continous Drain Current 30 A, Drain Source Resistance 21 to 40 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -2.5 to 16 V, Power Dissipation 40 W. Tags: Surface Mount. More details for RJF0611DPD can be seen below.

Product Specifications

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Product Details

  • Part Number
    RJF0611DPD
  • Manufacturer
    Renesas
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    30 A
  • Drain Source Resistance
    21 to 40 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -2.5 to 16 V
  • Power Dissipation
    40 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    DPAK(S)
  • Applications
    Power Switching

Technical Documents
View details on the manufacturer's website
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