RJK1052DPB

Note : Your request will be directed to Renesas.

The RJK1052DPB from Renesas is a MOSFET with Continous Drain Current 20 A, Drain Source Resistance 15 to 22 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Charge 29 nC. Tags: Surface Mount. More details for RJK1052DPB can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    RJK1052DPB
  • Manufacturer
    Renesas
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    20 A
  • Drain Source Resistance
    15 to 22 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Charge
    29 nC
  • Power Dissipation
    55 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    LFPAK
  • Applications
    Switching Mode Power Supply

Technical Documents

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.