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The RQJ0602EGDQS from Renesas is a MOSFET with Continous Drain Current -1.5 A, Drain Source Resistance 485 to 868 milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 10 V, Gate Charge 2.9 nC. Tags: Through Hole. More details for RQJ0602EGDQS can be seen below.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    -60 V, 2.9 nC, P-Channel Enhancement Mode MOSFET


  • Types of MOSFET
    P-Channel Enhancement Mode
  • Technology
  • Transistor Polarity
  • Number of Channels
  • Continous Drain Current
    -1.5 A
  • Drain Source Resistance
    485 to 868 milliohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 10 V
  • Gate Charge
    2.9 nC
  • Power Dissipation
    5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
  • Applications
    Power Switching

Technical Documents

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