RQK0202RGDQA

Note : Your request will be directed to Renesas.

The RQK0202RGDQA from Renesas is a MOSFET with Continous Drain Current 3.8 A, Drain Source Resistance 42 to 85 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Charge 3.7 nC. Tags: Surface Mount. More details for RQK0202RGDQA can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    RQK0202RGDQA
  • Manufacturer
    Renesas
  • Description
    20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3.8 A
  • Drain Source Resistance
    42 to 85 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Charge
    3.7 nC
  • Power Dissipation
    0.8 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    MPAK
  • Applications
    Power Switching

Technical Documents

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.