RQK0301FGDQS

Note : Your request will be directed to Renesas.

The RQK0301FGDQS from Renesas is a MOSFET with Continous Drain Current 6 A, Drain Source Resistance 28 to 49 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Charge 12 nC. Tags: Through Hole. More details for RQK0301FGDQS can be seen below.

Product Specifications

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Product Details

  • Part Number
    RQK0301FGDQS
  • Manufacturer
    Renesas
  • Description
    30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    6 A
  • Drain Source Resistance
    28 to 49 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Charge
    12 nC
  • Power Dissipation
    5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    UPAK
  • Applications
    Power Switching

Technical Documents

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