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RQK2001HQDQA

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RQK2001HQDQA Image

The RQK2001HQDQA from Renesas is a MOSFET with Continous Drain Current 0.4 A, Drain Source Resistance 5000 to 6700 milliohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -30 to 30 V, Gate Charge 1.8 nC. Tags: Surface Mount. More details for RQK2001HQDQA can be seen below.

Product Specifications

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Product Details

  • Part Number
    RQK2001HQDQA
  • Manufacturer
    Renesas
  • Description
    200 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.4 A
  • Drain Source Resistance
    5000 to 6700 milliohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Charge
    1.8 nC
  • Power Dissipation
    0.8 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    MPAK
  • Applications
    Power Switching

Technical Documents
View details on the manufacturer's website
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