UPA1951TE

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The UPA1951TE from Renesas is a MOSFET with Continous Drain Current -2.5 to 2.5 A, Drain Source Resistance 34 to 70 milliohm, Drain Source Breakdown Voltage -12 V, Gate Source Voltage -8 to 8 V, Gate Charge 2.4 nC. Tags: Surface Mount. More details for UPA1951TE can be seen below.

Product Specifications

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Product Details

  • Part Number
    UPA1951TE
  • Manufacturer
    Renesas
  • Description
    -12 V, 2.4 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -2.5 to 2.5 A
  • Drain Source Resistance
    34 to 70 milliohm
  • Drain Source Breakdown Voltage
    -12 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Charge
    2.4 nC
  • Power Dissipation
    1.15 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    TMM

Technical Documents