UPA2660T1R

Note : Your request will be directed to Renesas.

The UPA2660T1R from Renesas is a MOSFET with Continous Drain Current -4 to 4 A, Drain Source Resistance 33 to 62 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Charge 4.5 nC. Tags: Surface Mount. More details for UPA2660T1R can be seen below.

Product Specifications

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Product Details

  • Part Number
    UPA2660T1R
  • Manufacturer
    Renesas
  • Description
    20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -4 to 4 A
  • Drain Source Resistance
    33 to 62 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Charge
    4.5 nC
  • Power Dissipation
    2.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    HUSON

Technical Documents

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