QH8JB5

Note : Your request will be directed to ROHM Semiconductor.

QH8JB5 Image

The QH8JB5 from ROHM Semiconductor is a MOSFET with Continous Drain Current 5 A, Drain Source Resistance 33 to 51 milliohm, Drain Source Breakdown Voltage -40 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage -2.5 to -1 V. Tags: Through Hole. More details for QH8JB5 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    QH8JB5
  • Manufacturer
    ROHM Semiconductor
  • Description
    20 V, Single, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5 A
  • Drain Source Resistance
    33 to 51 milliohm
  • Drain Source Breakdown Voltage
    -40 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    -2.5 to -1 V
  • Gate Charge
    9 to 17.2 nC
  • Power Dissipation
    1.1 to 1.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TSMT8
  • Applications
    Switching

Technical Documents