The R6004END4TL1 from ROHM Semiconductor is an N-Channel Enhancement Mode Power MOSFET that is ideal for switching applications. It has a drain-source breakdown voltage of over 600 V, a gate threshold voltage of 4 V, and a drain-source on-resistance of less than 980 milli-ohms. This power MOSFET has a continuous drain current of up to 2.4 A and a power dissipation of less than 9.1 W. It offers low radiation noise coupled with fast switching capabilities that makes it suitable for parallelling operations. This RoHS-compliant MOSFET is available in a surface-mount package that measures 6.70 x 6.30 mm.