R6004END4TL1

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R6004END4TL1 Image

The R6004END4TL1 from ROHM Semiconductor is a MOSFET with Continous Drain Current 2.4 A, Drain Source Resistance 980 milli-ohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for R6004END4TL1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    R6004END4TL1
  • Manufacturer
    ROHM Semiconductor
  • Description
    600 V Power MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2.4 A
  • Drain Source Resistance
    980 milli-ohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    15 nC
  • Power Dissipation
    9.1 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Applications
    Switching applications

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